The melting temperatures, the lattice parameters and the optical properties of Nd doped Bi 1 2 SiO 2 0 have: been studied for the diode pumped laser applications. The lattice parameters and the melting temperatures decrease from 10.1055 to 10.1035 a and from 900 to 890 o C with Nd 2 O 3 concentration from 0 to 5 mol%. The crystals grown by Czochralski technique are transparent up to λ=500 nm. The width of the optical absorption peak due to Nd 3 + ion (λ=815 nm) is broader than that of Nd doped Y 3 Al 5 O 1 2 . Segregation coefficient of Nd is estimated to be about k=0.17. The solubility limit of Nd 2 O 3 into Bi 1 2 SiO 2 0 is also suggested to be about 5 mol%.