Single and multiple energy As and Sb implantations were performed into p-type 6H-SiC epitaxial layers at room temperature (RT) and 800 o C. Secondary ion mass spectrometry measurements showed severe implant loss for annealing temperatures >1500 o C. Rutherford backscattering spectroscopy/channeling (RBS/C) measurements indicated a high degree of residual lattice damage for RT implantations even after 1600 o C annealing while less damage was detected in 800 o C implanted samples. Electrical activations (ratios of sheet carrier concentrations to implant doses) of 11 and 20% were measured for 800 o C As and Sb implantations annealed at 1500 o C, respectively. The Schottky capacitance-voltage profiling measurements indicated substitutional concentrations in the low 10 1 8 cm - 3 range for both As and Sb. Based on the experimental data, carrier ionization energies of 130 and 88 meV were estimated for As and Sb donors, respectively. Vertical n-p junction diodes were made by using multiple energy As and Sb implanted epitaxial layers. Elevated temperature As implanted diodes exhibited a room temperature reverse leakage current of ~8x10 - 8 A/cm 2 with no passivation at -100 V bias and a forward series resistance of 460 Ω.