Vacuum
Using twin flat electrodes with their thin side parallel and opposite and with multi-input terminals the optical emissions of an He rf plasma were observed in order to study the excitation mode of the input power under various experimental conditions. Optical emission profiles from the sides of the electrodes depended on the rf frequency and the He gas pressure. When the power was asymmetrically supplied...
The anodization of Al-films was successfully achieved in an oxygen plasma excited by a high-frequency (0.5 MHz) electromagnetic field in a quartz reactor. The surface structure and chemical states of the plasma anodized Al-films have been analysed using XPS, AES, XRD and SEM. The surface structure of anodic floating oxidised Al-films produced in the high-frequency oxygen plasma is fine and close,...
The process of steel surface nitriding has been studied with a sample as an anode in an N 2 -H 2 -Ar abnormal glow discharge at a total gas pressure of 8 torr. The plasma was excited in a planar system consisting of a steel anode in the centre between two steel or molybdenum cathodes of the same size as the anode. The temperature of the nitrided sample was 550 o C. The sample...
The surface topography of multilayered W/Cu structures is studied after 100-340 keV Ne + and Ar + irradiation in the range of fluences up to 10 1 7 cm - 2 employing the stylus method. The characteristic features on the surface are correlated with the experimental results obtained when measuring stress relaxation during ion irradiation by employing the bending...
Ionization gauges are commonly considered to have identical sensitivity to hydrogen and deuterium due to the identical atomic configuration of the two gas molecules. We compared, experimentally, the sensitivity of twelve hot ionization gauges to hydrogen and deuterium and found significant differences between gauges. These differences depended on the specific gauge and systematically changed with...
The direct measurement of the intensity profile of an electron gun has been achieved using a position modulation technique. The current spilling over a sharp edge is differentiated using analogue signal recovery with a phase sensitive detector. The technique can be used to measure electron and ion beam profiles using standard surface analysis equipment and can be used to focus the probes in real time.
We report here, the improvement of the adhesion of CVD diamond films on WC-Co (6%) tools and the enhancement in the cutting tool life-time by the introduction of CF 4 in the CH 4 /H 2 gas mixture. By the use of this halogen precursor it was possible to reduce the substrate temperature during the deposition without degradation in the diamond film quality. The low-temperature...
The dynamic Monte Carlo computer simulation has been used to estimate the mean sputter depth and the surface composition gradient of binary component materials during prolonged ion bombardment. Calculation results indicate that for Pt 0 . 5 Cu 0 . 5 sputtering, the Pt mean sputter depth is much larger than for Cu at high fluence, but the Pt mean sputter depth approximates...
Ion kinetic investigations were performed during the deposition of PMMA (Polymethylmethacrylate) films using a 27.12 MHz driven parallel plate discharge configuration. The time dependent change of total pressure, partial pressures and growth rate were measured and the quantitative concentration of the most important gaseous reaction products is shown, which allows the observed growth rate to be understood...
Laser heating of a two-layer system is studied and the temperature dependence of the optical absorptance of the irradiated target is considered. The Laplace integral method is used to solve the heating problem. Expressions for the temperature profiles in the thin film and the substrate are obtained. Such profiles, together with the surface temperature are computed for four two-layer systems: aluminum-glass,...
A method for evaluating the effective electron mass in compound semiconductors of the form AB x C 1 - x or A x B 1 - x C from the variation of band gaps in them is presented here. The effective masses of a number of ternary semiconductor films have been computed by using this method.
The dependence of optical constants, structure and composition of titania thin films on the process parameters has been investigated. Films were deposited using both reactive electron beam evaporation and Ion Assisted Deposition (IAD). It has been observed that the refractive index of IAD films is higher than that for the reactively deposited films, without much difference in the extinction coefficient...
We have studied experimentally the influence of the angle of incidence (θ = 0 o , 5 o , 20 o , 35 o , 65 o , and 80 o ) upon the depth resolution, Δz, of Auger electron spectroscopy (AES) on multilayer Cr/Ni structures sputter-etched by Ar + and Xe + beams. For given values of angle θ and depth z, significantly lower values of Δz were...