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Niobium carbide thin films have been deposited on Si(100) substrates by direct current reactive magnetron sputtering using CH 4 as a carbon source. With increasing FCH4 from 4 to 22 sccm, the carbon content for the film increases from 32.7 to 68.7 at.% gradually, accompanying with a phase transition from hexagonal-Nb 2 C to cubic-NbC, and at the highest carbon content, the film exhibits...
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