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AgGa 0.25 In 0.75 Se 2 thin films prepared by the flash evaporation technique onto Corning 7059 glass substrates at T S =623-643K were single phase, nearly stoichiometric and polycrystalline with a strong (112) preferred orientation. The electrical resistivity of the films was in the range 20-95Ωcm. Thermoelectric power and Hall effect...
The thermal barrier coatings (TBCs) by gas tunnel-type plasma spraying exhibited ceramic-composite features consisting of a host oxide matrix ceramic with an embedded second phase material. The densities of the composite TBC were found to be higher than those sprayed with 100wt% ZrO 2 or Al 2 O 3 . In the coatings produced with powder mixtures of 50wt%, the embedded splats...
Cu films with thicknesses of 290-350nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was maintained in 0.5, 1.0 and 1.5Pa, respectively. The target voltage was fixed at 400V, but the target current increased from 69 to 200mA with increasing Ar pressure. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used...
Ag and Ag-(0.9wt%)Pd-(1.0wt%)Cu (APC) alloy films were deposited on glass substrates by RF magnetron sputtering. The reflectance of Ag films deposited at room temperature was 98% at a wavelength of 600nm. However, it decreased with increasing substrate temperature due to crystal grain growth and film surface roughening. The resistivity of pure Ag films with thickness of 100nm was about 2μΩcm, which...
We have studied the influence of the nitrogen partial pressure (P N2 ) on composition, crystal structure, internal stress, resistivity and hardness of the rf reactive sputtered Cr-N films.Cr-N films have been deposited onto glass substrates by rf reactive magnetron sputtering using a plasma emission monitoring control system, where a signal in proportion to the light emitted by the sputtered...
Amorphous SiO 2 (a-SiO 2 ) films were prepared by reactive RF magnetron sputtering method in an oxygen and argon mixture at room temperature. The chemical structure and electrical properties of the films were investigated as a function of the gas volume ratio [O 2 ]/[Ar]. When Ar was fixed at 40sccm and O 2 was increased, deposition rate would decrease firstly, then...
The conductivity of nanometer TiO 2 thin films was presented in this paper. The dependence of the conductivity of TiO 2 thin films on the thickness of the film and the substrate material were educed. The TiO 2 films were deposited by reactive magnetron sputtering of a Ti targets in an Ar+O 2 mixture in a conventional sputtering reactor. The thickness of the films deposited...
A new system for ion beam assisted deposition (IBAD) of metal layers on solid surfaces is described. A new original procedure for IBAD modification of metal surface covers a few physical processes such as in situ ion implantation, metal layer deposition and ion beam mixing. A truncated cone serves as a sputter target. A beam of ions enters the cone along its axis, impinges onto the target surface...
Au layers with thickness of about 110nm were sputter-deposited on unheated glass substrates coated with a Cr layer about 20nm thick. The chamber was evacuated to a pressure of 2Pa and then sputtering was carried out at Ar pressure of 4Pa. The Au/Cr bilayer films were annealed in a vacuum of 5x10 -4 Pa at 170 o C, 180 o C, 200 o C and 250 o C for from 5...
Ir-Ta alloy thin films were deposited on SiO 2 /Si substrates by a magnetron sputtering system using pure Ar as sputtering gas. The Ir/Ta composition ratio of the alloy films was varied by changing the number of Ta chips on an Ir target. The crystal structure of the alloy films changed from fcc-Ir to Ir 3 Ta, α-(Ir,Ta), Ta 3 Ir, and bcc-Ta with increasing Ta content. Post-deposition...
Ni x Fe 100-x films with a thickness of about 200nm were deposited on SiO 2 /Si(100) substrates at room temperature by DC magnetron co-sputtering using both Fe and Ni 80 Fe 20 targets. Compositional, structural, electrical and magnetic properties of the films were investigated. Ni 76 Fe 24 , Ni 6 ...
Ag oxide thin films were grown on glass substrates by sputtering an Ag target in an Ar+O 2 mixed gas. Effects of O 2 flow ratio on resistivity, reflectance and transmittance of the Ag oxide films were studied. Crystal structure and chemical binding state of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. Ag films...
240nm-thick Ni 49 Fe 51 films were sputter deposited on SiO 2 /Si(100) substrates at room temperature and then annealed in vacuum at 300, 400 and 480°C for 1h, respectively. Structural, electrical and magnetic properties of the films were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), four-point probe technique and a vibrating...
Indium sulfide thin films prepared using spray pyrolysis, with In/S ratio 2/3 in the solution, were annealed in vacuum at 300 and 400°C. The effect of this treatment on properties of the films was studied using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, optical absorption, transmission and electrical measurements. Optical constants of the films were calculated...
Thin films of Mn-doped ZnO with different doping concentration (0.8, 1, 3, 5at%) were prepared on Pt/Ti/SiO 2 /Si substrates by using sol–gel method. The effects of the doping concentration on the structural properties, electrical characteristics and element binding energy in films were investigated. X-ray diffraction (XRD) results showed that the c-axis orientation of ZnO films was affected...
Commercially graded SiC samples were implanted with 250keV germanium ions (Ge + ) at room temperature. For Ge + ions source, laser-induced plasma (LIP) technique was used. Ge + implantation was confirmed by energy dispersive X-ray (EDX) analysis. Change in FWHM and lattice constant of SiC samples has been observed after the Ge implantation, calculated by Bragg's law from XRD...
Extremely smooth iridium (Ir) thin films were deposited on Si(100) substrate at lower temperature than 300°C by pulsed laser deposition (PLD) technique using Ir target in a vacuum atmosphere. The crystal orientation, surface morphology, and resistivity of the Ir thin films were systematically determined as a function of substrate temperature. Well-crystallized and single-phase Ir thin films with (111)...
In this work, microstructural and physical properties were studied in the tin oxide films deposited by thermal evaporation of Sn films on stainless steel substrates followed by in situ D.C. plasma oxidation at 200°C substrate temperature. The surface properties were studied by scanning electron microscopy, X-ray diffraction, atomic force microscopy and four-point probe electrical resistivity. The...
Tin-doped indium oxide (ITO) films were deposited by RF magnetron sputtering on TiO 2 -coated glass substrates (the TiO 2 layer is usually called seed layer). The properties of ITO films prepared at a substrate temperature of 300°C on bare and TiO 2 -coated glass substrates have been analyzed by using X-ray diffraction, atomic force microscope, optical and electrical measurements...
Ni thin films with an intermediate layer of Cr were prepared by using dc magnetron sputtering under different conditions. Effects of deposition temperature, post-deposition annealing on the microstructure and the electrical characteristics were investigated. The relationship between film microstructure and its resistivity was analyzed. It was found that the crystal grains aggregated into large ones...
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