Adsorption of ground state nitric oxide and molecular oxygen on Ag at 130 K were observed to produce excited electrons which were detectable as a ''chemicurrent'' in a large area ultrathin film Ag/Si(111) Schottky diode sensor. The charge carriers produced at the surface had sufficient lifetimes and energies to reach the Ag/Si interface (6-8 nm) and surmount the Schottky barrier (=<0.5 eV). The detected current from nitric oxide exposure decreased with increasing coverage from an initial peak intensity of 1x10 - 4 e - /incident molecule. A secondary peak (5x10 - 5 e - /incident molecule) was observed at an exposure of approximately 22 ML. The signal decayed to the noise floor (~100 fA) at longer exposures (>40 ML). With molecular oxygen exposure a smaller peak intensity of 1x10 - 5 e - /incident molecule was observed, followed by a decay in signal to the noise floor at longer exposures (>10 ML). The signal from nitric oxide is attributed to the superposition of charge carriers produced by nonadiabatic adsorption of NO at 130 K on the Ag surface with carriers generated from the coverage dependent chemisorption of atomic oxygen produced during the formation and decomposition of (NO 2 ) dimers into atomic nitrous oxide. The latter is the cause of the observed secondary peak. The detected current from molecular oxygen exposure on the Ag surface at 130 K is consistent with molecular adsorption generating the detected current. The detection of this ''chemicurrent'' is direct experimental evidence of nonadiabatic energy transfer during molecular adsorption.