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Ce-doping NiFe2O4 spinel ferrite thin films were prepared on Pt / Ti / SiO2 / Si substrates using a chemical solution deposition method. It has been observed that Ce-doping induced enhancement of unipolar resistive switching properties, such as uniform switching voltages, enlarged ON / OFF ratio, and long retention in Pt / NiFe2O4 / Pt memory devices. The dominant conduction mechanisms in the thin...
Pr-doped ZnO hexagonal structure thin films with c-axis preferred orientation were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition technique. The effects of Pr doping amount on the resistive switching behavior of Pt/Zn1−xPrxO/Pt (x = 0, 0.01, 0.03, and 0.05) memory cells were investigated. The results showed that Pr-doping lowered the c-axis orientation degree of the ZnO thin...
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