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In the laboratory scale, cells based on Cu(In,Ga)Se2 grown by the 3-stage process reach the best performance because of high open-circuit voltage and short-circuit current (VOC–JSC) combination. One of the reasons for that could be the V-shaped gradient of Ga to In atomic ratio throughout the Cu(In,Ga)Se2 layer, which results from large differences in the diffusion coefficients of In and Ga. The location...
A graded bandgap structure proved to be an important factor for increasing an overall efficiency of the chalcopyrite-based thin film solar cells. This contribution is focused on the effects of sulfur incorporation into the surface region of industrial sequentially grown Cu(In,Ga)(Se,S)2 absorbers. A front grading due to such a sulfurization step enhances the bandgap in the space charge region, whereas...
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