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Device performance of 10nm length armchair graphene nanoribbon field effect transistors with 1.5nm and 4nm width (13 and 33 atoms in width respectively) are compared in terms of Ion/Ioff, trans-conductance, and sub-threshold swing. While narrow devices suffer from edge roughness wider devices are subject to more substrate surface roughness and reduced bandgap. Boron Nitride doping is employed to compensate...
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