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By means of liquid phase epitaxy the elastically strained In x Ga 1-x P/GaAs and In x Ga 1-x As y P 1-y /GaAs films (y 0.03) were grown in a wide interval of lattice mismatches. We have found the (111)B growth plane to be the most suitable for preparation of elastically strained films. Elastic strains up to 0.86% have been observed for the (111)B orientation. At a strain value of 0.8% a pseudomorphic film thickness of up to 0.3 μm was reached. This value exceeds the theoretical critical thickness by an order of magnitude.