We developed a new type of lead-free ferroelectric film: Ba(Ti0.89Sn0.11)O3 (BTS) with a chemical constituent at its quasi-quadruple point in the phase diagram of BaTiO3–xBaSnO3. The BTS film was prepared on Pt(111)/Ti/SiO2/Si(100) substrate by means of the sol–gel method. The results show that the as-prepared BTS thin film has a perovskite structure with preferred (110) orientation; a highly converse piezoelectric coefficient of d33 ∼135pm/V; and dielectric permittivity and dielectric loss of ∼2000 and ∼0.04, respectively, indicating that this new type of lead-free BTS film can probably be used to replace the conventional BaSrTiO3 and PbZrTiO3 films.