Photostimulated luminescence (PSL) in Eu(Ce) and Sm co-doped sulphides (SrS and CaS) and oxides (Y 2 O 3 ) has been studied in order to develop a novel erasable and rewritable optical memory using the photoluminescence method. When 250 nm UV irradiated samples were excited by a Nd-laser (1064 nm), PSL was observed at 600-650 nm for Eu 2 + -doped materials and at 560-600 nm for Ce 3 + -doped materials, due to the 5d-4f transition of Eu 2 + and Ce 3 + . The process of writing, storing, and erasing information was demonstrated experimentally in sulphides Sr(Ca)S and oxides (Y 2 O 3 ) doped two rare-earth ions Eu 2 + (Ce 3 + ) and Sm 3 + . Photoluminescence stimulated by IR-light in rare-earth oxides doped with rare-earth ions has been observed for the first time.