An integration technique adapted for silicon bipolar technology with full implantation and self-aligned base and emitter contacts is presented. Two high frequency circuits, a Gilbert cell and an amplifier with a bandwidth of 700 MHz that operate from a 2 V supply voltage have been integrated. The circuits content only npn transistors with cutoff frequency between 1.4-16 GHz and BV C B O > 15 V. The amplifier circuit has an adjustable gain range of 10-40 dB (from a command voltage) for a large domain of supply voltages (2-16 V).