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A simple analog has been developed to simulate the effects of bulk diffusion and surface recombination upon the hydrogen permeation through a single laminate. The analog is based on the similarity between the resistance to electrical current density and the resistance to hydrogen permeation flux. Permeation potential and permeation resistance are defined for both diffusion in the bulk and recombination on the surface. General formulae have been developed to analyze the gas-driven permeation (GDP) and the plasma-driven permeation (PDP). The relationships between the permeation flux and the gas pressure in GDP or the incident flux in PDP derived under specific conditions agree well with the former models.