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The present article investigates structural, chemical and electronic properties of epitaxial AlN films grown via plasma assisted molecular beam epitaxy on atomically clean Si (1 1 1) substrates. An inclusive optimization process of growth parameters by varying the substrate temperature (790–825 °C) and Al/N (III/V) ratio is demonstrated. The AlN film grown with optimized parameters yielded an FWHM...
A low defect-density AlN template film using V/III ratio modulation and nano-patterned sapphire substrate (NPSS) was achieved by metalorganic chemical vapor deposition. In contrast to conventional high-quality AlN/NPSS obtained with high coalescence thickness (>6 μm) using high growth temperatures (≥1250 oC), this study reveals the high crystallinity of AlN with the lower thickness of 2.55 μm grown...
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