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Conventional graphene nanoribbon (GNR) field-effect transistor (FET) fabrication involved the wet process with the separated nanoribbon formation and device fabrication. Here, we demonstrate one simple and novel non-solution method to integrate the GNR formation and the FET fabrication, where a gold film is used as mask for electrode deposition, following by using a SnO2 nanoribbon as mask for the...
Graphene is a promising material for high-performance electronics owing to its exotic electronic structure and high mobility. However, the lack of a band gap poses an obstacle to the realization of device applications. The challenge of creating a band gap in graphene has stimulated extensive research on graphene nanoribbons. Over the past few years, atomic precision synthesis, ballistic charge transport,...
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