In this paper, a study of the influence of hydrogen (concentrations 6 ppm − 1%) on the work function of thin metallic films at moderately elevated temperatures is presented. The work function was measured indirectly by the observation of the surface potential of dedicated test structures using scanning surface potential microscope. Metallic layers with thicknesses of 10, 20, 30, and 50 nm were deposited on semiconductor substrates as well as on a thick gold layer. The investigations were focused on palladium thin films although a comparison to results obtained for platinum layers was also discussed.
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