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2D semiconducting transition metal dichalcogenides (TMDs) are endowed with fascinating optical properties especially in their monolayer limit. Insulating hBN films possessing customizable thickness can act as a separation barrier to dictate the interactions between TMDs. In this work, vertical layered heterostructures (VLHs) of WS2:hBN:WS2 are fabricated utilizing chemical vapor deposition (CVD)‐grown...
The 2D semiconductor monolayer transition metal dichalcogenides, WS2 and MoS2, are grown by chemical vapor deposition (CVD) and assembled by sequential transfer into vertical layered heterostructures (VLHs). Insulating hBN, also produced by CVD, is utilized to control the separation between WS2 and MoS2 by adjusting the layer number, leading to fine‐scale tuning of the interlayer interactions within...
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