Addition of Pt to Ni silicide produces a robust [NixPt(l-x)]Si, which shows an improved morphological stability, an important reduction in encroachment defect density, a reduced tendency to form NiSi2 and significant variations in monosilicide texture without degrading the device performance or the yield of high-performance 65 nm SOI technologies.
A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial tensile stress is induced in the Si channel through elastic relaxation/strain of the SiGe/Si bi-layer structure. This strain results in 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared to the control device with no strain
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SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.