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The Sb 2 Te 3 film is an attractive candidate for phase change random access memory (PRAM) due to its rapid crystallization speed. However, the Sb 2 Te 3 film has unstable amorphous phase. In order to improve the phase stability and easy reamorphization, the nitrogen-doped Sb 2 Te 3 films were proposed. The characteristics of nitrogen-doped Sb 2...
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