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The influence of interfacial reactions on the formation of ohmic contacts to GaAs, ZnSe and GaN based semiconductor layers is reviewed. In the case of semiconductors whose Fermi levels are not pinned (ZnSe and GaN), disruption of interfacial contamination layers is critical during the interfacial reaction step. In these cases, interfacial phase formation appears to be detrimental to the contact properties...
The influence of interfacial reactions on the formation of ohmic contacts to GaAs, ZnSe and GaN based semiconductor layers is reviewed. In the case of semiconductors whose Fermi levels are not pinned (ZnSe and GaN), disruption of interfacial contamination layers is critical during the interfacial reaction step. In these cases, interfacial phase formation appears to be detrimental to the contact properties...
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