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Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 µm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
This paper reports a high-temperature, wide gain-bandwidth SOI-CMOS transimpedance (Rm) amplifier that is well suited for application to MEMS-based impedance sensors. The amplifier was fabricated using a fully depleted 0.5-μm technology and achieves a gain-bandwidth of 8 MΩ by 1.2 MHz at room temperature while drawing 0.66 mW from a 3.3-V supply. Gain and bandwidth remain above 2 MΩ and 0.3 MHz, respectively,...
In this paper, a three-dimensional (3D) eddy current field model to calculate the eddy current losses in an isolated phase bus is proposed. The temperature rises of the conductors and enclosures in the isolated phase bus are evaluated using the proposed set of thermal equations. Good agreement between the computed and test results is a good validation of the proposed methodology.
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