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Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 µm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 μm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
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