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In this paper, novel and promising high efficiency light-induced degradation (LID) free indium-doped Cz Si cells are presented. Two different commercial grade and large area B-doped Cz materials were included for comparison. Ion-implanted large area (239 and 242.22 cm2) screen printed full Al-BSF cells as well as passivated emitter rear contact (PERC) cells with oxide passivation and local aluminum...
Indium doping of Cz and CCz mono-crystalline silicon has been investigated as a means to reduce lifetime degradation after light soaking in wafers and cells. The lifetime degradation is due to the formation of a metastable boron-oxygen complex (B-O pairs) during incipient carrier injection and is proposed to be the mechanism responsible for light-induced degradation in p-type solar cells doped with...
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