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In article number 1802379, Yong Xu, Myung‐Gil Kim, Yong‐Young Noh, and co‐workers develop room‐temperature solution‐processed, high‐performance, solution‐processible, and reliable copper iodide (CuI) thin‐film transistors (TFTs). These p‐type CuI TFTs with a ZrO2 dielectric show impressively high field‐effect mobility of 1.93 cm2 V−1 s−1 at a low operating voltage of 5 V. Transparent complementary...
Here, room‐temperature solution‐processed inorganic p‐type copper iodide (CuI) thin‐film transistors (TFTs) are reported for the first time. The spin‐coated 5 nm thick CuI film has average hole mobility (µFE) of 0.44 cm2 V−1 s−1 and on/off current ratio of 5 × 102. Furthermore, µFE increases to 1.93 cm2 V−1 s−1 and operating voltage significantly reduces from 60 to 5 V by using a high permittivity...
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