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The junction formation of polycrystalline CuInSe 2 absorbers (CIS) with thermally evaporated CdS was investigated by high-resolution synchrotron X-ray photoelectron spectroscopy. The chemistry and electronics of the interfaces of Cd partial electrolyte treated CIS (“wet” processed) and clean, decapped CIS (“dry” processed) were compared. A valence band offset of 0.96(10) eV was determined...
Proton irradiation damage for CuInSe 2 (CIS) solar cell material was investigated by using a piezoelectric photothermal spectroscopy (PPTS) from the viewpoint of nonradiative transition. Stoichiometric and Cu-rich thin film samples were grown on GaAs substrate for the measurements. Among the observed peaks at 1.01, 0.93 and 0.84 eV for the proton irradiated samples at room temperature, two...
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