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Although high-performance inversion-mode InGaAs NMOSFETs are demonstrated, high performance GaAs MOSFETs with directly deposited high-k dielectrics remain a big challenge. Some researchers believe that Fermi-level of GaAs is intrinsically pinned at the mid-gap with directly deposited ALD AI2O3 In this paper, we systematically study the electrical properties of ALD AI2O3 NMOSCAPs, PMOSCAPs, NMOSFETs...
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect-transistors (MOSFETs) with 0.75 to 40 mum gate length fabricated on semi-insulating substrates and p-type doped InP epi-layers with atomic-layer-deposited (ALD) Al2O3 and HfO2 as gate dielectrics are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high- quality gate oxides and unpinning...
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