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In this paper, we report a significant improvement in the external quantum efficiency (EQE) of AlGaN p-i-n solar-blind detectors (SBDs) by use of an n-type Al 0.6 Ga 0.4 N ''window'' layer. Under 0V bias, an EQE of 58% at λ=274nm (responsivity ~0.13A/W) was obtained without the use of an antireflection coating. The EQE was seen to depend on bias voltage, having...
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