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Spin-transfer torque random access memory (STT-RAM) has demonstrated great potentials in embedded and stand-alone applications. However, process variations and thermal fluctuations greatly influence the operation reliability of STT-RAM and limit its scalability. In this work, we propose a new field-assisted access scheme to improve the read/write reliability and performance of STT-RAM. During read...
Novel nonvolatile memory (NVM) technologies are gaining significant attention from semiconductor industry in the competition of universal memory development. However, as nanoscale devices, these emerging NVMs suffer from the intrinsic technology challenges such as large process variations. The importance of effective statistical approaches for yield estimation and robust design arises in the commercialization...
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