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High threading dislocation densities limit the operability of infrared focal plane arrays based on large lattice-mismatched heterostructures such as HgCdTe/CdTe/Si. Recently it has been shown that post-growth thermal cycle annealing can routinely reduce the surface etch pit density from >5×10 6 cm −2 to as low as 9×10 5 cm −2 . To fully exploit the procedure, a deeper...
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