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A novel technique for planarizing gallium nitride (GaN) wafers has been developed. In this method, hydroxyl radicals (OH) catalytically generated on a polishing plate are used to oxidize the surface of a GaN wafer, and the produced oxide is dissolved in the solution. H 2 O 2 is employed as the source of OH. Iron is used as the catalyst material that functions as the polishing plate...
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