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High‐Electron‐Mobility Transistors
In article number 2200536, Ming‐Wen Lee, Edward Yi Chang, and colleagues report on AlGaN/GaN HEMTs on silicon substrates using thick copper‐metallized interconnects with a Pt diffusion barrier layer for Ka‐band application. The reported AlGaN/GaN HEMTs can enhance the device performance with good reliability. High voltage stress and high thermal stability tests...
Herein, the AlGaN/GaN high‐electron‐mobility transistors (HEMTs) on silicon substrates using thick copper‐metallized interconnects with Pt diffusion barrier layer for Ka‐band application are reported. High output power density of 6.6 W mm−1 with power‐added efficiency (PAE) of 45.6% at 28 GHz is achieved for the 4 × 50 μm device in continuous‐wave (CW) mode. No obvious change in the drain–source...