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In this work, we present FEAs based on silicon field emitter tips on top of silicon nanowires with four different device structures: (a) buried tips, (b) buried tips with graphene, (c) released tips, and (d) released tips with graphene. Measured device parameters are used to characterize the performance of the devices. In general, we obtain low turn-on voltages when bFN is low. Additional studies...
The growth mechanism of multiwalled carbon nanotubes has been a subject of considerable research interest. Published results show that nanotubes may be formed by a variety of methods using different combinations of carbon-rich gases and etchant gases. We present an overview of different forms of carbon, showing how nanotubes relate to other carbon structures and how they may be produced....
We demonstrated a novel point-typed carbon nanotube field emitters using a triangular-shaped carbon nanotube films. We also investigated the field emission properties of the field emitters according to the tip angles. The wider field emitters exhibited higher emission current, and the field emitters with a tip angle of 120° showed extremely high emission current density over 104 A/cm2 (> 10 mA)...
Graphene has a huge variety of unique optoelectronic properties. Its recent rapid emergence and demonstrable richness in electron transport has been unprecedented. This atomically thin, ordered structure has exceptionally high attainable aspect ratios - potentially higher even than that of carbon nanotubes - whilst defective edge terminations rich in dangling bonds render it superior to metallic nanowires;...
Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties...
A good quality graphene is transferred onto honeycomb-like CNTs arrays with inner supporting CNTs. The efficient field emission is demonstrated due to a high aspect ratio protrusions and graphene crack edges. A high efficient current density about 1.2 mA/cm2 at threshold electric field of 7.8 V/μm with a turn-on electric field of 1.8 V/μm at the current density of 10 μA/cm2 is observed due to high...
A vertically aligned multi-walled carbon nanotube (VACNT) film has been characterized by rectangular waveguide measurements. The complex scattering parameters (S-parameters) are measured by a vector network analyzer at X-band frequencies. The effective complex permittivity and permeability of the VACNT film have been extracted using the Nicolson-Ross-Weir (NWR) approach. The extracted parameters are...
In this work, we report the fabrication of aligned CNT/Ni/W composite materials. The vertically aligned CNTs are grown on Si by plasma enhanced chemical vapour deposition using Ni films as catalysts. The Ni-W alloys are then filled into the gaps between the CNT forests by electroplating, forming a dense, low-stress composite film. Their mechanical properties are investigated by nanoindentation technique...
The fabrication of high frequency acoustic wave devices requires the development of thin films of piezoelectric materials with improved morphological and electro-acoustical properties. In particular, the crystalline orientation of the films, surface morphology, film stress and electrical resistivity are key issues for the piezoelectric response. In the work reported here, ZnO thin films were deposited...
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