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In this work, we present FEAs based on silicon field emitter tips on top of silicon nanowires with four different device structures: (a) buried tips, (b) buried tips with graphene, (c) released tips, and (d) released tips with graphene. Measured device parameters are used to characterize the performance of the devices. In general, we obtain low turn-on voltages when bFN is low. Additional studies...
Graphene has a huge variety of unique optoelectronic properties. Its recent rapid emergence and demonstrable richness in electron transport has been unprecedented. This atomically thin, ordered structure has exceptionally high attainable aspect ratios - potentially higher even than that of carbon nanotubes - whilst defective edge terminations rich in dangling bonds render it superior to metallic nanowires;...
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