Systematic SIMS analyses with low‐energy (250 eV ∼1 keV) oxygen, cesium and krypton primary beams have been carried out on a set of fully strained uniform epitaxial Si1−xGex films (x = 5 ∼ 60%), as well as a germanium ion‐implanted silicon standard to investigate the matrix effect under various conditions. It is shown that preferential ion yield enhancement of one matrix component over the other can...
A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial tensile stress is induced in the Si channel through elastic relaxation/strain of the SiGe/Si bi-layer structure. This strain results in 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared to the control device with no strain
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