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Crystalline quartz films with an AT-cut plane have been grown by catalyst-enhanced vapor-phase epitaxy, at atmospheric pressure, using two quartz buffer layers on a sapphire (110) substrate. In this method, the first quartz buffer layer was deposited on the sapphire (110) substrate at 773K. After annealing at 823K, the second buffer layer was deposited at 723K. The crystal quartz epitaxial layer was...
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