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Fully functional thin-film blue LED was fabricated by novel means of (1) performing epitaxial growth of a single crystalline InGaN/GaN heterostructure on a recycled graphene/SiC substrate (2) followed by release and transfer of the heterostructure.
We demonstrate self-aligned fully-depleted III-V MOSFETs using CMOS-compatible device structures and manufacturable process flows. Processes with good manufacturability and scalability, such as, gate definition and spacer formation using RIE, and formation of self-aligned source/drain extensions (SDE) and self-aligned raised source/drain (RSD), have been established on III-Vs. We demonstrate short-channel...
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