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The light-emitting-diode (LED) surface of GaN epilayers grown on Si substrate was irradiated by a femtosecond laser (λ = 800 nm). The morphology of LED surface after laser irradiation was measured by optical microscope and scanning electron microscopy. It was found that many radial cracks appeared in the film on account of thermal expansion and then became more numerous as the number of laser pulses...
Laser-induced periodic surface structures (LIPSS) were processed on the TiO2 bulk surface under the irradiation of 248 nm unpolarized KrF excimer laser pulses in air. Spatial LIPSS periods ranging from 2 to 3.5 μm are ascribed to the capillary wave. These microstructures were analyzed at different laser pulse numbers with the laser energy from 192 to 164 mJ. The scanning electron microscopy results...
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