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We carry out a comparative design study on two high-efficiency power amplifiers (a second-harmonic tuning LD-MOS and a Doherty GaN-based amplifier) linearized through baseband digital predistortion so as to comply with the W-CDMA 3GPP standard with acceptable efficiency. Several predistortion schemes (both memoryless and with memory) were tried, having in mind the final FPGA implementation. The results,...
This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates, relying on an electro-thermal model validated against DC, pulsed DC and S-parameter measurements. The measured devices are backside mounted, but the layout is also conceived for flip-chip mounting. Based on accurate estimation of the device thermal resistance, the model enables to explore and assess...
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