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In this paper the sensitivity of FinFETs AC performances vs. variations of various physical parameters is analyzed at varying bias, and in particular with Independent Gates (IG) bias chosen to exploit the unique back-gating properties of these multi-gate devices. Sensitivity charts, extracted through a numerically efficient, yet accurate, physics-based TCAD simulation method, are identified as a valuable...
In this letter, we show that innovative physics-based simulations can be used for a comprehensive analysis of RF stages subject to random variations of technological parameters, including the computation of the average (deterministic) RF performance along with their statistical deviation. The variability analysis is addressed by means of the recently developed physics-based sensitivity analysis of...
FinFETs operated with varying bias, and in particular with Short-circuited Gates (SG) or Independent Gates (IG), are actively investigated for RF analog applications. The device process variability is known to vary, at least for DC performances, according to the FINFET bias. This paper presents a novel, comprehensive physics-based variability analysis focused on AC parameters for a double-gate (DG)...
This paper presents the physics-based variability analysis of multi-fin double-gate (DG) MOSFETs, representing the core structure of FinFETs for RF applications. The variability of the AC parameters as a function of relevant geometrical and physical parameters, such as the fin width, the fin separation, the source (drain)-gate distance and the doping level is investigated. The analysis exploits a...
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