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This paper is aimed at exploring efficient approaches for the simulation of Random Telegraph Noise (RTN) in variability analysis of advanced floating gate non-volatile memories. RTN is traced back to randomly occupied localized traps located close to the Si/SiO2 interface. While the effect of traps has been investigated previously by means of time-consuming Monte Carlo simulations [1], in this work...
A general framework for the physics-based small-change sensitivity analysis is presented, aimed at the variability assessment of SS and SS-LS device performances as a function of process parameters. The proposed technique is based on the linearization of a physical device model (e.g. drift-diffusion) around a nominal process parameter, and on the evaluation of relevant Green's functions linking the...
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