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Thermally oxidized p-type Si [resistivity (5–10)Ωcm and 〈100〉 orientation] with oxide thickness of 245nm was used as the substrate for the deposition of graphene by CVD. The formation of multilayer graphene (MLG) was confirmed by Raman spectroscopy. A heterojunction was fabricated by sol–gel coating of TiO 2 on CVD grown graphene layer. The formation of titanium dioxide was verified by electron...
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