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Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge1−xSnx) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge1−xSnx optoelectronic devices into the mid-infrared range.
We demonstrate enhanced photoluminescence from Ge/SiGe quantum wells with strain from −0.28% (compressive) to 0.25% (tensile) achieved by epitaxial growth techniques. The intensity enhancement and peak shift from photoluminescence measurements are in agreement with theoretical calculations.
We model the impact of tensile strain, GeSn alloys and n-type doping on the performance of germanium-based lasers. Ultimately, doping offers limited benefits, whereas GeSn and strain can reduce the lasing threshold by >100x.
High-quality Ge 1−x Sn x thin films on InGaAs buffer layers have been demonstrated using low-temperature growth by molecular beam epitaxy. X-ray diffraction and secondary ion mass spectrometry are used to determine the strain and Sn concentration. Up to 10.5% Sn has been incorporated into the Ge 1−x Sn x thin film without Sn precipitation, as verified by transmission...
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