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The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. We demonstrate surface-normal asymmetric Fabry-Perot and microdisk resonator modulators employing Ge quantum wells grown on silicon.
The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. Using an asymmetric Fabry-Perot design, we demonstrate the first surface-normal semiconductor modulator structure grown on silicon.
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