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Vanadium (V) doped Cd0.9Mn0.1Te (CdMnTe:V) crystals were grown with a nominal Vanadium concentration of 1×1017atoms/cm3 from excess 10at% Te solution that was carried out by the vertical Bridgman method with accelerated crucible rotation technique(ACRT). The as-grown crystals display a high resistance characteristic of 4.123×101°Ω·cm in the wafer cutting from the middle part of the ingot. The infrared...
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