The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The wide bandgap semiconductors such as the lll-V nitrides (GaN, AIN) and SiC, tunneling is low due to the high barrier heights, and is hampered further by the inability to achieve degenerate n and p-type impurity doping. By utilizing the giant built-in electronic polarization fields present in wurzite lll-V nitride semiconductor heterostructures, it is possible to achieve interband tunneling in p-n...
Wide bandgap lll-V nitride semiconductors have attracted a large interest in recent years due to their applications in high power and opto-electronic devices. However, the development of nitride based UV optical devices has been limited due to the difficulties in growth and processing of good quality p-type and n-type layers of high Al composition AIGaN, where both acceptor and donor dopants have...
High-electron mobility transistors (HEMTs) based on ultrathin AIN/GaN heterostructures with a 3.5-nm AlN barrier and a 3-nm Al2O3 gate dielectric have been investigated. Owing to the optimized AIN/GaN interface, very high carrier mobility (~1400 cm2/V ldr s) and high 2-D electron-gas density (~2.7times1013/cm2) resulted in a record low sheet resistance (~165 Omega/sq). The resultant HEMTs showed a...
III-V nitride-based HEMT technology has made rapid progress over the last decade. Benefiting from the extremely high polarization charge, in this work, we demonstrate record high DC current density (2.9 A/mm) and very high extrinsic transconductance (~430 mS/mm) AIN/GaN HEMTs.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.