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In this paper, we demonstrate for the first time an implant free In0.53Ga0.47As n-MOSFET that meets the reliability target for advanced technology nodes with a max operating Vov of 0.6 V. In addition, an excellent electron mobility (μeff, peak=3531 cm2/V-s), low SSlin=71 mV/dec and an EOT of 1.15 nm were obtained. We also report the scaling potential of this stack to 1nm EOT without loss of performance,...
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