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Field-effect transistors (FETs) with junctionless (JL) channels have recently attracted much attention for various applications, such as metal-oxide semiconductor thin-film transistors (TFTs) [1], memory devices [2] and Si nanowire TFTs [3, 4]. The Si junctionless (JL) transistors employing high dopant concentration (> 1019 cm3) in the source, drain, and nano-scaled channel have been demonstrated...
This work investigates the degradation of electrical characteristics of amorphous silicon thin-film transistors during the accelerated ESD stress with a 40V high voltage and a high/low current of 2 mA/0.1 μA conditions. Both the leakage current and the threshold voltage shift are severe as the accelerated ESD stress applied at the gate region. The 40V accelerated ESD stress with a high current has...
This work proposed the normally-off gate-recessed AlGaN/GaN high electron mobility transistors (HEMTs) with more suitable threshold voltages by adjusting the Al mole fraction in the various AlGaN layer thickness under the gate region. It is found that the slope of threshold voltage versus Al mole fraction curves is decreased with decreasing the thickness of AlGaN layer due to the decrease of piezoelectric...
Kindlin-1 is an epithelial-specific member of the novel kindlin protein family, which are regulators of integrin functions. Mutations in the gene that encodes Kindlin-1, FERMT1 (KIND1), cause the Kindler syndrome (KS), a human disorder characterized by mucocutaneous fragility, progressive skin atrophy, ulcerative colitis, photosensitivity, and propensity to skin cancer. Our previous studies indicated...
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