The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Photonic data storage would dramatically improve performance in existing computing architectures by avoiding time and energy consuming electro-optical conversion. To date, photonic memories have been predominantly volatile and lose their content if the input power is switched off. We exploit hybrid photonic-phase-change materials for realizing non-volatile, all-photonic memories and computing structures...
We present a new implementation of phase-change chalcogenide materials onto integrated photonic circuits for on-chip non-volatile memories. In particular, we demonstrate readily multi-level transmission modulation and present an analysis on the achievability and number of accessible levels.
We demonstrate all-optical operation of nonvolatile memory cells made from phase-change materials. The cells are embedded in nanophotonic circuits and can be used at writing speeds approaching the GHz-regime.
Single photon emission at telecom wavelength is observed in InAsP/InP QDs. These dots will be embedded in a metallic subwavelength plasmonic cavity allowing for broadband Purcell factors allowing the engineering of efficient entangled-photon sources.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.