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Tetrahedral amorphous (ta-C) carbon-based memory devices have recently gained traction due to their good scalability and promising properties like nanosecond switching speeds. However, cycling endurance is still a key challenge. In this paper, we present a model that takes local fluctuations in sp$^{2}$ and sp$^{3}$ content into account when describing the conductivity of ta-C memory devices. We...
Photonic data storage would dramatically improve performance in existing computing architectures by avoiding time and energy consuming electro-optical conversion. To date, photonic memories have been predominantly volatile and lose their content if the input power is switched off. We exploit hybrid photonic-phase-change materials for realizing non-volatile, all-photonic memories and computing structures...
We present a new implementation of phase-change chalcogenide materials onto integrated photonic circuits for on-chip non-volatile memories. In particular, we demonstrate readily multi-level transmission modulation and present an analysis on the achievability and number of accessible levels.
We demonstrate all-optical operation of nonvolatile memory cells made from phase-change materials. The cells are embedded in nanophotonic circuits and can be used at writing speeds approaching the GHz-regime.
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